Abstract
We report spectroscopic ellipsometry (SE) and low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8 to 3.5 kbar) thus far. SE allows us to assess the preparation of smooth and abrupt GaN surfaces by chemical treatments in real time, and, coupled with the reflectance data, the Ed n/d E contribution to dispersion, which is important for laser action. The reflectance data explicitly show the non-linear behavior of the B-A and C-A splittings vs. the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal space analysis, allowing us to obtain band parameters such as Δ SO =17.0±1 meV and Δ CF =9.8±1 meV with increased confidence.
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