Abstract
Low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal-space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1meV with increased confidence.
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