Abstract
Poisson's equation is solved for a homogeneous semiconductor in equilibrium and the results are presented in a form which is relatively independent of the impurity concentration. Some convenient analytic forms are given for the dependence of carrier concentration on field and the spatial variation of these quantities. The application of the results to surface field-effect experiments and to abrupt p- n junctions is discussed. In particular, it is shown that the field at an asymmetric junction depends on the impurity concentration on the more heavily doped side. A formula is also given for a critical transistor base width below which the entire base region becomes inverted in equilibrium.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
