Abstract
The conversion capability of power semiconductor devices used in power electronic conversion networks is explained. A general power electronic conversion network is defined and the general power relationships relating the real power transferred through the conversion network with the real power transformed by means of conversion devices are derived. Starting from the general power relationships, the poperties of power electronic conversion networks for rectification, inversion, frequency conversion and d.c. conversion are explained. All properties are derived disregarding the internal structure of particular conversion networks.
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