Abstract
Owing to their many intriguing properties, transparent metal oxide semiconductors have become the most attractive alternatives for silicon-based semiconductors widely used today and been widely investigated by researchers. However, most of high performance metal oxide thin film transistor (TFT) relied on vacuum processing equipment and expensive rare element indium in the manufacturing process, the need for developing low cost indium-free metal oxide TFT has become urgent. In this work, a bilayer TFT composed of ZnO nanoparticles (NPs)/SnO2 was prepared by solution method. In this device structure, SnO2 film can provide high conductivity and carrier mobility, while the ZnO NPs in the upper layer can modulate and control channel conductance and further protect SnO2 film from air environment. The obtained device exhibits the excellent performances including μFE of 22.9 cm2V−1s−1 and Ion/Ioff about 1 × 107, subthreshold swing (SS) value about 0.36 V dec−1, and excellent environmental stability have been effectively achieved. Furthermore, the performance enhancement mechanism for the bilayer transistor with the help of simulation and related experiments was further explored. The bilayer ZnO NPs/SnO2 TFT has great cost advantage compared with indium based metal oxide TFTs and exhibits excellent potential in low cost thin-film electronic devices.
Published Version
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