Abstract
This paper presents the benefit of the near-threshold design of random-access memory (SRAM) design to reduce software errors during very low-power operations in nanosatellites. The near-threshold design is based on an optimization of the use of the Schmitt trigger structure for a 45 nm technology. The results of the soft error susceptibility of the optimized design are compared to a standard 6T SRAM cell. These two designs are modeled and validated by comparing the results with experimental measurements of both static noise margin (SNM) and single event upset (SEU). The optimized circuit reduces the multiple upsets occurrence from 95% down to 14%. Based on the use of simulation tools, the paper demonstrates that the near-threshold design of SRAM is an excellent candidate for the radiation point of view for agile nanosatellites. The results computed for the near-threshold SRAM device demonstrate an improvement of a factor of up to 25 of the soft error rate (SER) in a GEO orbit.
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