Abstract
This paper considers the small-signal characteristics of lateral transistors made on epitaxial layers of finite thickness, as is the case in most monolithic integrated circuits. For tractability and ease of comprehension, one-dimensional approximations are made, but these are usually adequate for predicting the essential features of the frequency response. Various circuit models are proposed, including the low-frequency charge control model whose validity can be extended to higher frequencies by the use of frequency-dependent elements. Alternatively, multilump models with frequency-independent elements can be used at the higher frequencies. Experimental data on small-signal common-emitter current gain is presented in support of the theory.
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