Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability

Abstract

In this letter, a p-channel lateral double-diffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The proposed p-LDMOS has two n-channels that are controlled by an auto-generated voltage signal ( ${V}_{\text {Gn}}$ ). The voltage signal ${V}_{\text {Gn}}$ is generated during the ON and OFF states of the hole current that flows across an integrated resistor ( $R_{\text {p}}$ ) implemented in the P-base region. Thus, the current capability of the p-LDMOS can be significantly enhanced by the introduced electron current. The simulation results show that the current capability of the proposed p-LDMOS can be comparable to that of the n-type triple RESURF technique without any conductivity modulation effect. The power loss of the proposed p-LDMOS is reduced by approximately 78.6% and 15.6% compared with the triple RESURF p-LDMOS and n-LDMOS, respectively, at a rated load current density of $25~\mu \text{A}/\mu \text{m}$ .