Abstract
In this paper, a super-junction p-type lateral diffused metal–oxide–semiconductor transistor (SJ-pLDMOS) utilizing electron to enhance the current capability is proposed. The proposed SJ-pLDMOS has an n-channel in the drain region and is controlled by an auto-generated voltage signal ( ${V}_{\mathrm {\textsf {Gn}}}$ ). The voltage signal ${V}_{\mathrm {\textsf {Gn}}}$ is generated during the ON- and OFF-state of the hole current which flows across an integrated resistor ( ${R}\text{p}$ ) implemented in the p-base region. Thus, the proposed SJ-pLDMOS utilizes both hole and electron currents to significantly enhance the current capability. Simulation results show that the current capability of the proposed SJ-pLDMOS without any conductivity modulation effect is comparable with that of a super-junction nLDMOS (SJ-nLDMOS). The total power loss of the proposed super-junction pLDMOS (SJ-pLDMOS) is reduced by about 26.7% and 18% compared with that of the SJ-nLDMOS and Triple Resurf nLDMOS (TR nLDMOS) at a rated load current density of $25~\mu \text{A}/\mu \text{m}$ , respectively.
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