Abstract
After introducing the fundamental properties of GaN and related materials, introductory device design is described in view of applying them for switching power device. In order to increase the efficiency in power conversion systems, important device parameters, such as on-resistance (R on), blocking or breakdown voltage (B V), and switching frequency have to be considered in relevant to the trade-offs among them. Additionally, potential advantages of vertical device structure are discussed that may increase the current handling capability, where conductivity modulation effect may have a role to realize a future GaN power devices.
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