Abstract
In this paper, the conductivity modulation effect in high voltage (570V) n-channel Schottky Injection FET (SINFET) is analyzed. The conductivity modulation effect, which is dependent on the Schottky barrier characteristics and the device structure, is evaluated in terms of the onset voltage for conductivity modulation. Results show that the onset voltage for conductivity modulation of the drift region increases with increasing drift region length and Schottky contact width, but decreases with increasing drift region dose. Finally, a comparison of the DC and switching performance of the LDMOST, various types of LIGBTs, and SINFET devices is given.
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