Abstract
In this paper lue have considered in detail how the introduction of radiation damage centres into the depletion region of silicon p-n junctions effects the small signal terminal admittance of the diodes. The results are interpreted in terms of conductivity modulation arising from a trapping level 0.31eV above the conduction band which gives rise to a hole capture type recombination process. Damage profiles have been extracted from the forward bias capacitance voltage curves.
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