Abstract
On the basis of the two-dimensional numerical solution of quasi-hydrodynamic equations for a semiconductor plasma the avalanche injection current filamentation is studied in GaAs n +-i-n +, n +-p-n + and n +-n-n + structures. It is demonstrated that a lengthy n +-contact region in these structures provides the spontaneous formation of multiple current filaments. Effect of structural parameters and dependence upon current are studied. Formation of multiple filaments is explained by a distinction between a small spatial parameter of instability (due to avalanche-injection modulation of the i-region conductivity) and a large spatial parameter of current damping (due to current spreading in the lengthy n +-contact region).
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