Abstract
We report the important performance parameters of SiC-NWFET devices including on/off current ratio (Ion/Ioff), gating effect, transconductance (gm), and carrier mobility (μh). The channel length dependence of these key performance parameters of the SiC-NWFETs with varying channel lengths ranging from 120 nm to 1.5 μm has been demonstrated. The device with the 120 nm channel length has led to a very high on/off current ratio (1.34 × 104) and very strong gating effect. Furthermore, the transconductance and the hole mobility have been determined as 6.9 nS and 1.696 cm2/V·s, respectively, at Vds of 0.05 V. This study shows good promise of the SiC-NWFET devices to be used in advanced solid-state nanoelectronic devices capable of operating at high frequency and high temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
