Abstract
Technology scaling demands shallower junctions for MOSFETs, making high-conductivity access to the intrinsic device harder to achieve. Considerable effort has been devoted to improving process technology in order to reduce the sheet resistivity of shallow implanted layers. However, a calculation of the components of resistance as a function of technology node suggests that sheet resistance is unlikely to be a limiting factor in scaled MOSFETs. Contact and link-up resistance neighboring the channel will play an increasingly important part in driving junction technology.
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