Abstract
The temperature dependence of series resistance components in SiGe:C HBTs was measured from 4.3 to 423 K. A physics-based description as well as various widely used analytical formulations for modeling the temperature dependence of sheet and contact resistances were compared with the measured data. The standard two-parameter power law model only covers a limited temperature range, while three-parameter models exhibit good accuracy over the entire measured temperature range, and a four-parameter physics-based model shows excellent accuracy. This is the first demonstration for modeling the various sheet resistances from 4.3 to 423 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
