Abstract
Numerical simulation results of noise due to current fluctuations along an n+−n−n+ submicron structure are presented. The mathematical framework is based on the interpretation of the equations describing electron transport in the semiclassical transport model as stochastic differential equations (SDE). According to this formalism the key computations for the spectral density describing the noise process are reduced to a special initial value problem for the Boltzmann transport equation (BTE). The algorithm employed in the computation of the space dependent noise autocovariance function involves two main processes: the stationary self-consistent solution of the Boltzmann and Poisson equations, and a transient solution of the BTE with special initial conditions. The solution method for the BTE is based on the Legendre polynomial method. Noise due to acoustic and optical scattering and the effects of nonparabolicity are considered in the physical model.
Highlights
Current noise in semiconductors is due to the inherent randomness of the scattering mechanisms that govern electronic transport
Employing the machinery of stochastic differential equations (SDE), a new noise model [1] shows that the key computations for the noise autocovariance function are reduced to the transient solution of the Boltzmann transport equation (BTE) with special initial conditions
In this paper we study the impact that the spatial variation of the doping has on the current noise autocovariance function
Summary
Current noise in semiconductors is due to the inherent randomness of the scattering mechanisms that govern electronic transport These current fluctuations around a stationary value are generally characterized by the associated autocovariance function or equivalently, by their spectral density. Employing the machinery of SDE, a new noise model [1] shows that the key computations for the noise autocovariance function are reduced to the transient solution of the BTE with special initial conditions. This novel approach was previously utilized [2] for the computation of the noise spectral density in bulk silicon.
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