Abstract
A new deterministic approach to device modeling has been developed in which the Boltzmann transport equation and the Poisson equation are solved self-consistently. With this approach, the non-equilibrium space-dependent momentum distribution function along with the electric potential are obtained throughout the entire device. The distribution function provides essentially all the information required for all aspects of device analysis. The new method has been applied to an n +- n- n + diode. The simulations have provided good results, and are obtained in approx. 1/100 the CPU time required by similar Monte-Carlo calculations. This method is valuable for use in CAD tools for semiconductor devices.
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