Abstract
We present a new 2-D MOSFET simulation tool which employs a spherical harmonic expansion to deterministically solve the Boltzmann transport equation (BTE), and thereby provide the distribution function for the entire device. The unique aspects of the approach are: (i) The spherical harmonic formulation of the BTE is performed to arbitrarily high order; (ii) Self-Consistent deterministic solution of the BTE and Poisson equations is achieved for the 2-D MOSFET structure; (iii) Impact Ionization is included to provide values for substrate current which are based on the distribution function, (iv) Self-consistently determining the distribution function and potential requires approx. 30 minutes on a Spark5. (v) Solving the 2-D Boltzmann equation alone (as a post-processor) requires approx. one minute on a Spark5, whereas similar Monte Carlo calculations are significantly longer.
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