Self-assembled InAs dots and quantum wires fabricated on patterned (3 1 1)A GaAs substrates by molecular beam epitaxy

Abstract

We have investigated one-dimensionally arranged self-assembled growth of InAs quantum dots and the formation of lateral n–i–p–i heterojunction quantum wire structures based on the facet-selective doping mechanism of an amphoteric silicon dopant. Both structures were successfully formed on the same facet stripes on patterned (3 1 1)A GaAs substrates by molecular beam epitaxy in a self-organized way, thus enabling quantum dots to be selectively formed along the quantum wires in a single growth sequence.