Abstract
There have been considerable efforts for the growth of InAs self-assembled quantum dots (QDs), and recently, many interesting works of selective growth on patterned substrates are under progress. Most of the works so far have been concentrated on the growth of QDs on GaAs substrates. On the other hand, the growth of InAs QDs on silicon substrates is expected to provide interesting growth mechanisms and new zero-dimensional states. We would like to present that InAs QDs are successfully grown on silicon substrates. The position control of QDs is also shown to be possible by utilizing patterned silicon/silicon dioxide (Si/SiO/sub 2/) substrates.
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