Abstract
Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (0 0 1) surface were studied.
Published Version
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