Abstract
Selective WSi2/Si Schottky diodes, with an ideality factor of 1.02, are obtained by limited reaction processing chemical vapor deposition at 800 °C, using WCl6 vapor diluted in H2. The deposition temperature is shown to be the most important parameter for defect formation. The diodes were fabricated on patterned and blanket wafers, and no additional thermal treatment is needed to obtain the final diode characteristics.
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