Abstract
Low resistance tungsten (W) films were deposited onto GaAs substrates by means of rapid thermal low pressure chemical vapor deposition (RT-LPCVD), using tungsten hexafluoride (WF6) gas reduced by hydrogen (H2). Deposition temperatures up to 550 °C for durations of up to 30 s were explored, resulting in deposition of relatively pure W films (containing less than 2% O2 and C). Post-deposition sintering of the layers led to significant reduction of the resistivity to values as low as 50 μΩ cm. The efficiency of the deposition improved upon increasing the H2 flow rate up to 1250 sccm resulting in a deposition rate of about 10 nm/s at a total chamber pressure of 3.5 Torr and temperature of 500 °C. The films appeared to be polycrystalline with a very fine grain structure, regardless of the deposition temperature with good morphology and underwent a limited reaction with the underlying GaAs substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
