Selective surface migration for defect-free quantum dot ensembles using metal organic chemical vapor deposition

Abstract

We discuss a post-nucleation pause technique that reduces the density of coalesced islands (defects) in a quantum dot (QD) ensemble without significantly altering the QD density. The growth conditions under which the QDs nucleate, are optimized to form high density QDs with few defects, however, it is very difficult to prevent coalescence completely. Pausing the AsH 3 flow for a few seconds after nucleation allows surface adatoms to migrate from polycrystalline defect sites where the bond strengths are weak to crystalline QD sites. This selective migration allows the reduction of defect density from 1.9×10 9/cm 2 (0 s pause) to apparently defect-free QD ensemble (30 s pause) while maintaining a QD density >6×10 10/cm 2. We will discuss statistical analysis based on atomic force microscope images, high-resolution transmission electron microscopy and photoluminescence to characterize the effects of AsH 3 pauses on the QD density and crystallographic shape.