Abstract
We discuss a growth technique for producing a high quality quantum dot (QD) ensemble that has both high QD density and low defect density. The growth conditions under which the QDs nucleate, are optimized to form high density QDs with few defects, however, it is very difficult to prevent coalescence completely. Pausing the AsH<sub>3</sub> flow for a few seconds after nucleation allows surface adatoms to migrate from poly-crystalline defect sites where the bond strengths are weak to crystalline QD sites. We will discuss statistical analysis based on atomic force microscope (AFM) images, high-resolution transmission electron microscopy (HRTEM), and electroluminescence (EL) to characterize the effects of AsH<sub>3</sub> pauses on the QD density and crystallographic shape. Ground state PL from capped QDs is measured at 1.38 μm with a 40 meV linewidth. We demonstrate lasing from the first excited state under room-temperature pulsed characteristics.
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