Abstract
In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N2 annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
Highlights
Semiconductor–metal junction-based electronic devices are being studied for the applications in nanometer regime as the alternative of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) [1,2,3,4,5,6]
The barrier heights determined by two methods give big difference, which causes the difficulty in the determination of Schottky barrier height
The existence of traps causes the microscopic inhomogeneity of Schottky barrier, which will in turn degrade the ideality factor, change the Schottky barrier height [7, 8]
Summary
Semiconductor–metal junction-based electronic devices are being studied for the applications in nanometer regime as the alternative of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) [1,2,3,4,5,6]. In SB-MOSFETs, silicon in channel region reacts with the deposited metals This reaction can cause the generation of trap states, causing microscopic inhomogeneity of Schottky barrier height [7]. Erbiumsilicide could generate heavy trap sites at silicon/erbium silicide interface. The study on the erbium-silicided Schottky diode characteristics, incorporating trap states with Schottky barrier height and their effects on the electrical characteristics of SB-MOSFETs are very important. The detailed characteristics of erbiumsilicided Schottky diode, fabricated on the p-type silicon are introduced and the interface of Schottky diode is analyzed using the current–voltage and capacitance–voltage (C–V) measurement methods. By incorporating equivalent circuit model with the C–V measurement method, trap density, lifetime and Schottky barrier height are extracted in erbium-silicided Schottky diode. The simple DIBL model of SB-MOSFETs is proposed and compared with the scaling theory of double gate (DG) MOSFETs
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