2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET

Abstract

In this paper an analytical surface potential model of a dual material gate (DMG) Schottky Barrier (SB) metal-oxide-semiconductor field effect transistor (MOSFET) is explored. The surface potential model is established by using two-dimensional solution of Poisson's equation, with essential boundary conditions near the drain and source ends. The proposed device has metal-semiconductor (Schottky) junction instead of p-n junction. In the DMG structure the effect of work function, drain to source voltage, gate to source voltage on the surface potential are observed. Furthermore, the simulation results of proposed DMG-SB-MOSFET shows good immunity to short channel effects(SCE) and is assessed by considering the drain-induced barrier lowering(DIBL) and compared with equivalent single material gate (SMG) SB- MOSFET. Moreover, the DMG and SMG SB-MOSFET are compared in terms of ambipolar behavior, ON-state and OFF-state current of the device. The developed analytical model for surface potential along the channel length are in close agreement with the Silvaco Technology Computer Aided Design device simulator data.