Abstract
We have used photocurrent measurements to demonstrate a strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition. Large voltage-induced shifts in absorption are observed at room temperature in the wavelength range from 1.2 to 1.58 μm. We anticipate that the results can be extended to fabricate GexSi1−x optoelectronic devices operating at room temperature.
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