Abstract
We have used photocurrent measurements to demonstrate a strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition. Large voltage-induced shifts in absorption are observed at room temperature in the wavelength range from 1.2 to 1.58 μm. We anticipate that the results can be extended to fabricate GexSi1−x optoelectronic devices operating at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
