Abstract
A red shift of the fundamental absorption edge due to an electric field applied perpendicular to the multiple quantum wells (MQWs) may result from quantum effects such as the Quantum Confined Stark Effect (QCSE) [1] and has already been demonstrated in several compound semiconductors, e.g. the GaAs/AlGaAs system [2] and the InP/InGaAs system [3]. However, no such room-temperature effects have been reported for the GexSi1-x system although the presence of the QCSE has been indicated and photocurrent measurement results at 77 K have been shown [4]. In this communication we present room temperature photocurrent measurements in GexSi1-x/Si MQWs grown by Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) [5],[6]. These measurements indicate that optoelectronic devices such as optical modulators [7] and Self Electrooptic Devices (SEEDs) [8] operating at the technologically important wavelengths of 1.3 fim and 1.55 μm can be realized.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
