Abstract
The polarization properties of valence intersubband transitions in p-type doped Si0.75Ge0.25/Si multiple quantum wells are investigated using Fourier infrared absorption spectra. It is found that TE and TM polarized light beams both can excite valence intersubband transitions in SiGe/Si multiple quantum wells. Meanwhile, a strong dichroism is also observed for HH1→HH2 transitions because the splitting peaks between TE and TM absorption have different activity under s- and p-polarized states. However, the strong mixing of light- and heavy-hole states in split-off state SO1 weakens the dichroism of HH1→SO1 transitions.
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