Abstract
Abstract : The purpose of the research was to perform scientific study and experimentation on potential new Si based devices for future optical and electronic applications. The research areas included novel detectors, modulators, sources, new properties, and other quantum devices using Si molecular beam epitaxy (Si-MBE) based quantum wells and superlattices. With the support of ONR, we have made significant advances in the understanding of optical properties of intersubband transition of Si(1-x)Ge(x)/Si multiple quantum wells, and the fabrication of multiple quantum well infrared detectors operating in the 8-12 micrometer range. Large many-body effects have been observed in 6-doped Si and heavily doped SiGe/Si quantum well structures. We have also investigated the Stark effect of type II SiGe/Si quantum well structures for optical modulator application in 1-2 micrometer range. For potential realization of Si-based light sources we have continued the study of luminescence from monolayer superlattices and strained alloy layers. In the area of transport properties, we have calculated the effective mass and mobility of holes in strained SiGe layers as a function of Ge composition.
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