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Abstract
InP crystals were etched by reactive ion etching (RIE) with ethane and hydrogen (C2H6/H2). Etched crystals and gas species were characterized by photoluminescence and mass spectroscopic measurements. Evaporation of phosphorus is induced by hydrogen, mainly originating from H2 gas. Incorporation of C increases with the gas species of hydrocarbon having multiple bonds. Near-bandgap emission with intensities greater than before RIE, which shows the hydrogen passivation, and defect-complex-related emission bands at 1.06-1.07 eV enhanced by RIE were observed. The role of gas species and the identification of defects are discussed on the basis of the experimental results.
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