Electrical characterization of ZnSe epitaxial layer reactive-ion-etched by a gas mixture of ethane and hydrogen

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The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by transforming the measured resistances to the electrically active thickness estimated from the resistivity of as-grown ZnSe layers. The estimated electrically active thicknesses were smaller than the thickness of ZnSe epitaxial layers remaining after RIE, for both p- and n-ZnSe. The influence of heat treatment and current injection on the high resistivity regions differed between p- and n-ZnSe.