Abstract
A common-emitter current gain of 10 has been measured at 77 K for a 100 nm-base resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure. The current gain for 25 nm-base RHETs has reached 25, which is the highest value yet reported for hot-electron transistors, and the collector current peak-to-valley ratio has reached 15.0 for the same device.
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