Abstract
A clear negative differential resistance (NDR) due to the resonant tunneling effect is observed in InGaAs/InAlAs multiple quantum well (MQW) diodes with Si-doped quantum well structures at room temperature. The NDR appears in the wide voltage region. It is found that the peak current of the NDR for undoped well structures decreases with increasing temperature, while that for Si-doped well structures increases with increasing temperature, leading to the observation of the NDR at room temperature.
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