Abstract
We investigated the tunneling current-voltage ( I–V ) characteristics of Al0.3Ga0.7As/GaAs multiple quantum well (MQW) diodes with various electron densities, N s, and scattering rates, Γ. Clear periodic negative differential resistances (NDRs) due to the formation of high-field domains were observed for the samples with low N s and Γ, while such NDRs were completely absent in the first plateau region of the I–V characteristics of the samples with high N s and Γ. It was found that such formation/destruction of the high-field domains in MQW diodes is controlled by the interplay of the tunneling rate and the electron supply functions between adjacent coupled quantum wells. The condition for the high-field domain formation is clarified as a function of N s and Γ.
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