Abstract
Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.
Highlights
Molybdenum disulfide (MoS2 ) belongs to the transition metal dichalcogenides (TMDs).Structurally, MoS2 is a stack of planes where covalently bonded S-Mo-S atoms in layers are closely packed in a hexagonal arrangement by weak van der Waals forces
Continued to investigate the effect of incident angular flux on molybdenum disulfide films deposited by magnetron sputtering and found that the structure of MoS2 films changed significantly with the variation of incident angular flux
To improve the process preparation of molybdenum disulfide to expand its application in the device field, it is essential to study the effect of high temperature on the optoelectronic and structural properties of molybdenum disulfide prepared by magnetron sputtering
Summary
Molybdenum disulfide (MoS2 ) belongs to the transition metal dichalcogenides (TMDs). Structurally, MoS2 is a stack of planes where covalently bonded S-Mo-S atoms in layers are closely packed in a hexagonal arrangement by weak van der Waals forces. Continued to investigate the effect of incident angular flux on molybdenum disulfide films deposited by magnetron sputtering and found that the structure of MoS2 films changed significantly with the variation of incident angular flux. Investigations into the effect of deposition temperature on molybdenum disulfide films have mainly focused on the changes of film morphology, while the structural and optoelectronic properties of the films have been less studied, as well as the deposition temperature settings not being very high To improve the process preparation of molybdenum disulfide to expand its application in the device field, it is essential to study the effect of high temperature on the optoelectronic and structural properties of molybdenum disulfide prepared by magnetron sputtering. The effects of sputtering temperature on the structure, optical and electrical properties, and deposition rate of the obtained films were investigated to provide a reference for the preparation of high-quality films with excellent properties
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