Abstract
Molybdenum disulfide (MoS 2 ) thin films were prepared by magnetron sputtering MoS 2 (99.9% purity) target at the different substrates (such as sapphire and silicon) at the various argon pressure and power discharge. Deposition parameters influence on the structure and optical properties of the MoS 2 thin films were analyzed by atomic force microscope (AFM) and spectrophotometer that was used for detecting reflectance spectra and then to calculate thin films bandgap. MoS 2 thin films on sapphire substrates have smoother surface roughness and higher bandgap energy than MoS 2 thin films on Si substrate. MoS 2 thin films bandgap energy increasing and surface roughness decreasing was caused by power discharge decreasing.
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