Abstract
Antimonide cobalt thin films were deposited on BK7 glass substrates at various substrate temperatures by ion beam sputtering deposition with a fan-shape target. The influence of deposition temperature on the microstructure and thermoelectric properties of antimonide cobalt thin films were systematically investigated. It is found that the Seebeck coefficient of the thin film increases at first and then decreases with the increasing deposition temperature. The Seebeck coefficient of the sample deposited at 250°C has maximum value and increases stably when the measuring temperature increased from room-temperature to 600K. The electrical conductivity of the thin film increases significantly to 5.6×104Scm−1 when the deposition temperature was 450°C and then decreases greatly when the temperature increased to 500°C and 550°C. The behavior of electrical conductivity of the sample deposited at 250°C changes from metallic to semiconducting after the measuring temperature exceeded 540K. The power factor of antimonide cobalt thin film deposited at 250°C has a maximum value of 0.93×10−4Wm−1K−2 at room-temperature and then increases to 3.5×10−4Wm−1K−2 when the measuring temperature was 540K.
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