Research on Schottky diode with high rectification efficiency for relatively weak energy wireless harvesting

Abstract

Wireless power harvesting technology can convert RF energy into DC energy, but the main RF energy density in the environment is relatively low. Therefore, in order to improve the rectification efficiency of the transmission system under 2.45 GHz relatively weak energy density, this paper studies the influencing factors of rectification efficiency. Based on device optimization, a silicon layer combination contact GeSn Schottky diode structure for 2.45G relatively weak energy harvesting is proposed in this paper, which is simulated and verified using Silvaco and ADS simulation tools. The results show that the current responsivity and the turn-on voltage of GeSn Schottky diode with Si layer is about 21.5 A W −1 and 0.18 V, respectively. Under the condition of 2.45 GHz and −10 dBm relatively weak energy density, its rectification efficiency is about 10%, and when the input energy is 0 dBm, its rectification efficiency can reach 40%, twice that of ordinary Ge Schottky diodes. • Microwave wireless power transmission (MWPT) system is a device that converts RF energy into DC voltage, which can also deliver electrical energy in space without transmission lines. As the core device of rectifier circuit, the performances of Schottky diodes largely determine the rectification efficiency. • The turn-on voltage, series resistance and junction capacitance of Schottky diode are closely related to the rectification efficiency under relatively weak energy density. • 3. The material type and the work function difference between the metal and the semiconductor largely determine the turn-on voltage of the Schottky diode.