Abstract
With the development of modern communication technology, unlimited energy harvesting technology has become more and more popular. Among them, the weak energy density wireless energy harvesting technology has broken through the limitations in traditional transmission lines and can use the “waste” energy in the environment, which has become very popular. The Schottky diode is the core device of the 2.45 G weak energy density wireless energy harvesting system, and its performance determines the upper limit of the system's rectification efficiency. From the material design point of view, using crystal orientation optimization technology and Sn alloying technology, we propose and design a Ge-based compound semiconductor with large effective mass, large affinity, and high electron mobility. On this basis, the device simulation tool is further used to set reasonable device material physical parameters and geometric structure parameters, and a Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission is realized. The simulation of the ADS rectifier circuit based on the SPICE model of the device shows that comparing with the conventional Schottky diode, the turn-on voltage of the device is reduced by about 0.1 V, the zero-bias capacitance is reduced by 6 fF, and the reverse saturation current is also significantly increased. At the same time, the designed new Ge-based Schottky diode is used as the core rectifier device to simulate the rectifier circuit. The results show that the new-style Ge-based Schottky diode is in the weak energy working area with input energy in a range of –10 — –20 dBm. The energy conversion efficiency is increased by about 10%. The technical solutions and relevant conclusions of this article can provide a useful reference for solving the problem of low rectification efficiency of the 2.45 G weak energy density wireless energy harvesting system.
Highlights
From the material design point of view, using crystal orientation optimization technology and Sn alloying technology, we propose and design a Ge-based compound semiconductor with large effective mass, large affinity, and high electron mobility
The results show that the new-style Ge-based Schottky diode is in the weak energy working area with input energy in a range of –10 — –20 dBm
New Ge-based SBD device rectification test circuit
Summary
Ni/Au/n-GaN肖特基二极管可导位错的电学模型 Physical model of conductive dislocations in GaN Schottky diodes 物理学报. 基于N型纳米晶硅氧电子注入层的钙钛矿发光二极管 Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer 物理学报. 基于离子注入隔离的微缩化发光二极管阵列性能 Ion implantation isolation based micro-light-emitting diode device array properties 物理学报. 基于该器件 SPICE 模型的 ADS 整流电路仿真表明: 与传统 Ge 肖特基二极管相比, 该新型 Ge 基肖特基二极管在输入能量为–10— –20 dBm 的弱能量工作区域, 能量转换效率提升约 10%. 然 而, 在 2.45 G 弱能量密度 RF 信号输入条件下, 基 于 SBD 的微波射频无线能量收集系统整流效率偏 低, 尚无法真正实现商业应用 [3−5].
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