High rectification efficiency direct bandgap Ge1−xSnx Schottky diode for microwave wireless power transfer

Abstract

Energy conversion efficiency is one of the core key indicators for evaluating the performance of microwave wireless power transmission (MWPT) system and how to improve the energy conversion efficiency of MWPT is one of the hotspots and focuses in the current research. Reducing the zero-bias resistance of the common core component Ge Schottky diode of the rectifier circuit can effectively improve the rectification efficiency of the rectifier circuit, thereby improving the energy conversion efficiency of the MWPT. In view of this, this paper proposes a direct bandgap Ge1−xSnx alloy (D-Ge1−xSnx) Schottky diode device structure for MWPT through modeling analysis and simulation design. D-Ge1−xSnx materials have twice the electron mobility of Ge materials, so D-Ge1−xSnx Schottky diodes have lower zero-bias resistance and are more suitable for MWPT. Based on the D-Ge1−xSnx Schottky diode spice model parameters, the ADS is used to simulate the rectifier circuit. The results show that the single-tube rectification efficiency can reach 77.5% under the condition of 2.45 GHz and 22 dBm energy density, and it is increased by 8.6% compared with the common HSMS-2820 Ge Schottky diode. The high rectification efficiency D-Ge1−xSnx Schottky diode proposed and designed in this paper can provide valuable reference for the design of the core components of the MWPT system rectifier circuit and the development of the energy conversion efficiency of the MWPT system.