Research on ESD failure voltage model of the T-shaped wiring structure in GOA products

Abstract

In the GOA (Gate on Array) circuits, which are commonly employed in LCD (Liquid Crystal Display) products, the metal wire layers have been found to be sensitive to ESD (Electrostatic Discharge) in production, leading to an increase in the failure rate of GOA products, especially in T-shaped wiring structures. In this paper, we conducted a study on the relationship between the ESD failure voltage and structure parameters of T-shaped wiring structures in GOA products to enhance their reliability. We established an ESD failure voltage model for T-shaped wiring structures based on the relevant electrical breakdown theory. And failure voltage and gap breakdown voltage data are required for accurate model parameters fitting. Hence, ESD tests on the T-shaped wiring structure samples were conducted. In addition, ESD simulation of T-shaped wiring structure using CST software was applied to supply gap voltage data unavailable from tests. Based on the results of the tests and simulation, parameters of the ESD failure voltage model were fitted. And we performed the model modification using verification tests for higher accuracy. The results show that our model errors are below 5 %. Guided by the ESD failure voltage model, a more reliable T-shaped structure can be produced in GOA.