Abstract
<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">This study focuses on the influence of boron doping in FinFET Lightly Doped Drain (LDD) region. By modulating the concentration of boron, the maximum of electric field can be reduced to improve the reliability in hot carrier stress (HCS), while the initial electric characteristics of boron doped devices do not change a lot, compared with those of the standard (STD) device. Even though Boron doping may cause slight decreases in transconductance (gm) and Ion, but it can effectively improve the reliability of the device. The reduction of the electric field affected by boron is demonstrated in the simulation. Careful adjustment is needed to prevent the maximum of the electric field from shifting to the other side of LDD and causing the rise of the electric field rise. In this study, the electric characteristic of LDD boron doping in FinFET structure is comprehensively analyzed.</i>
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