Refractive index changes in constant total effective length GaN/AlN multiple quantum well systems under external electric field

Abstract

In this work we have investigated the effect of external electric field on the electronic structure and refractive index changes of a GaN/AlN constant total effective length multiple quantum well. A decreasing oscillatory behavior for energy levels was seen when the electric field increased and in some energy values the energy levels intersected. By increasing the number of wells, oscillator strength dropped suddenly and moved to higher electric field in a critical electric field. By using the number of wells and the total length of the structure as two tuning tools, we were able to select our previously determined critical electric field.