Effect of electric field on optical properties of GaN/AlN constant total effective length multiple quantum well systems

Abstract

In this work we have investigated the effect of external electric field and number of wells on the absorption coefficient of GaN/AlN constant total effective length multiple quantum well system. We found that there is a blue shift in the absorption peak positions when number of wells increases while we have retained the total length of the structure constant. Systems with two and four numbers of wells have minimum and maximum absorptions among the studied systems. Thus, at constant total length, excess increasing of the number of wells do not help too much to increase the absorption coefficient amplitude. This fact is important from experimental point of view, since we can grow less number of thin films in a multiple quantum well system while we have larger absorption coefficients.