Abstract
A reduction in indium incorporation during the MBE growth of In(Al,Ga)As at moderate temperatures has been observed by RHEED oscillations and confirmed by X-ray diffractometry. The cause is believed to be surface segregation which can result in an under-estimate of the indium flux calculated from In As RHEED oscillations, and the growth under non-optimum conditions of In-deficient In(Al,Ga)As with poor morphology.
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