Abstract
RHEED intensity oscillation data recorded during the molecular beam epitaxial (MBE) growth of InSb are presented for the first time. The effects of changing the substrate temperature and the antimony to indium flux ratio (J(Sb4)/JIn) are investigated. RHEED oscillations are most pronounced for antimony-rich growth, with flux ratios close to unity. Antimony-induced RHEED intensity oscillation data are also presented. RHEED oscillations can now be used to calibrate growth rates and effective flux ratios during the MBE growth of InSb.
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