Redistribution coefficients of metal impurities in indium phosphide grown by synthesis-solute diffusion technique

Abstract

Indium inclusion in synthesis-solute diffusion (SSD) grown InP crystals was found to depend on growth temperature and phosphorus vapor pressure and can be described using a calculation model of inclusion on crystallizing with a cellular front. The setup for synthesis employs an electromagnetic mixture of liquid indium, which increases the growth rate up to 1 mm/h, a great improvement on the usual rate of a few millimetres per day. Distribution coefficients of most of harmful impurities that are difficult to remove are measured at an impurity concentration of 10 −2 mass%. It was shown that purification of the obtained material, removing most impurities, has occurred.